High-Q on-chip inductors embedded in wafer-level package for RFIC applications

Author

Feng, Tao ; Cai, Jian ; Kwon, Henri HK ; Wang, Qian ; Dou, Xinyu

Author_Institution

Tsinghua Univ., Tsinghua

fYear

2008

fDate

28-31 July 2008

Firstpage

1

Lastpage

4

Abstract

Wafer level packaging (WLP) technology has been used to integrate high-Q inductor on Si substrate. These inductors consist of a thick Cu electroplated rerouting to reduce series resistance and a thick dielectric layer to separate the inductors from Si substrate. The measured results show that the peak O-factor is 30 at 4 GHz for a 0.77 nH inductor, which is good agreement with the simulated performance by HFSS. Therefore, this technology realizes embedded high-Q inductors in WLP and can improve the performance of RF system.

Keywords

Q-factor; electronics packaging; inductors; radiofrequency integrated circuits; silicon; RFIC applications; Si; electroplated rerouting; frequency 4 GHz; high-Q on-chip inductors; series resistance; thick dielectric layer; wafer-level package; Capacitance; Dielectric substrates; Electrical resistance measurement; Electronics packaging; Equivalent circuits; Inductors; Radio frequency; Radiofrequency integrated circuits; Spirals; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-2739-0

Electronic_ISBN

978-1-4244-2740-6

Type

conf

DOI

10.1109/ICEPT.2008.4606957

Filename

4606957