DocumentCode
2685995
Title
Characterisation of Large-Signal Bipolar Transistors in L-Band
Author
Hutchings, J.L.
fYear
1985
fDate
4-6 June 1985
Firstpage
165
Lastpage
167
Abstract
Practical problems encountered in the characterisation of an L-band common base bipolar power transistor using three different characterisation techniques are discussed. One of the techniques, an improved "load-pull" measurement technique, is shown to be a superior characterisation method. Results obtained from this method can be used to design a collector matching network.
Keywords
Bipolar transistors; Computer errors; L-band; Microwave measurements; Microwave theory and techniques; Power amplifiers; Power generation; Power measurement; Power transistors; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1131930
Filename
1131930
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