• DocumentCode
    2686106
  • Title

    AlN/IDT/AlN/Sapphire as packageless structure for SAW applications in harsh environments

  • Author

    Legrani, O. ; Elmazria, O. ; Bartasyte, A. ; Aubert, T. ; Talbi, A.

  • Author_Institution
    Inst. Jean Lamour, Univ. de Lorraine, Vandœuvre-lès-Nancy, France
  • fYear
    2012
  • fDate
    7-10 Oct. 2012
  • Firstpage
    2102
  • Lastpage
    2105
  • Abstract
    Packageless heterostructure AlN/IDT/AlN/Sapphire was investigated as a solution protection of the interdigital transducer against agglomeration phenomena at high temperature. For this purpose, the performance of conventional IDT/AlN/Sapphire and protected AlN/IDT/AlN/Sapphire heterostructures were compared. The capability of AlN protective thin film to minimize the deterioration of electrodes was shown.
  • Keywords
    electrodes; interdigital transducers; surface acoustic wave transducers; thin films; SAW; agglomeration; electrodes deterioration; interdigital transducer; packageless structure; protective thin film; Annealing; Electrodes; III-V semiconductor materials; Oxidation; Surface acoustic waves; Temperature; Temperature sensors; AlN; IDTs agglomeration; Packageless hétérostructure; Sapphire; high temperature; protective layer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2012 IEEE International
  • Conference_Location
    Dresden
  • ISSN
    1948-5719
  • Print_ISBN
    978-1-4673-4561-3
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2012.0525
  • Filename
    6561930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2686106