Title :
AlN/IDT/AlN/Sapphire as packageless structure for SAW applications in harsh environments
Author :
Legrani, O. ; Elmazria, O. ; Bartasyte, A. ; Aubert, T. ; Talbi, A.
Author_Institution :
Inst. Jean Lamour, Univ. de Lorraine, Vandœuvre-lès-Nancy, France
Abstract :
Packageless heterostructure AlN/IDT/AlN/Sapphire was investigated as a solution protection of the interdigital transducer against agglomeration phenomena at high temperature. For this purpose, the performance of conventional IDT/AlN/Sapphire and protected AlN/IDT/AlN/Sapphire heterostructures were compared. The capability of AlN protective thin film to minimize the deterioration of electrodes was shown.
Keywords :
electrodes; interdigital transducers; surface acoustic wave transducers; thin films; SAW; agglomeration; electrodes deterioration; interdigital transducer; packageless structure; protective thin film; Annealing; Electrodes; III-V semiconductor materials; Oxidation; Surface acoustic waves; Temperature; Temperature sensors; AlN; IDTs agglomeration; Packageless hétérostructure; Sapphire; high temperature; protective layer;
Conference_Titel :
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4673-4561-3
DOI :
10.1109/ULTSYM.2012.0525
