Title :
A Dual-Gate FET Constant Phase Variable Power Amplifier
Author :
Drury, D.M. ; Zimmerman, D.C. ; Zimmerman, D.E.
Abstract :
A 1-Watt X-band variable power amplifier is described which employs an 1800 µm GaAs dual-gate FET. Small-signal models of the device are presented and used to design for minimum insertion phase change over the gain control range. The amplifier has a power-added efficiency of 25 percent and its insertion phase varies less than 15 degrees over a 15 dB gain control range.
Keywords :
Bonding; FETs; Gain control; Gallium arsenide; Instruments; MESFETs; Power amplifiers; Radio frequency; Scattering parameters; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1131945
