DocumentCode
2686205
Title
A Dual-Gate FET Constant Phase Variable Power Amplifier
Author
Drury, D.M. ; Zimmerman, D.C. ; Zimmerman, D.E.
fYear
1985
fDate
4-6 June 1985
Firstpage
219
Lastpage
222
Abstract
A 1-Watt X-band variable power amplifier is described which employs an 1800 µm GaAs dual-gate FET. Small-signal models of the device are presented and used to design for minimum insertion phase change over the gain control range. The amplifier has a power-added efficiency of 25 percent and its insertion phase varies less than 15 degrees over a 15 dB gain control range.
Keywords
Bonding; FETs; Gain control; Gallium arsenide; Instruments; MESFETs; Power amplifiers; Radio frequency; Scattering parameters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1131945
Filename
1131945
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