Title :
A novel method for the measurement of the C-V characteristic of a solar photovoltaic cell
Author :
Jeevandoss, C.R. ; Kumaravel, M. ; Kumar, V. Jagadeesh
Author_Institution :
Central Electron. Centre, Indian Inst. of Technol. Madras, Chennai, India
Abstract :
A novel method for obtaining the capacitance - voltage (C-V) characteristic of single crystalline or polycrystalline silicon solar photovoltaic (SPV) cells is demonstrated. Measurement of the C-V characteristics of an SPV cell is hindered by the presence of leakage resistance. The proposed method compensates the parallel leakage resistance of a SPV cell with the addition of a negative resistance of equal value. Test results obtained through experimentation validate the efficacy of the proposed method.
Keywords :
capacitance measurement; negative resistance; silicon; solar cells; voltage measurement; C-V characteristic measurement; capacitance-voltage characteristic; negative resistance; parallel leakage resistance; polycrystalline silicon solar photovoltaic cell; single crystalline silicon solar photovoltaic cell; solar photovoltaic cell; Capacitance; Capacitance-voltage characteristics; Crystallization; Electrical resistance measurement; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Testing; Voltage; C-V characteristics; Solar photovoltaic cells; buil-in potential; doping concentration; negative resistance;
Conference_Titel :
Instrumentation and Measurement Technology Conference (I2MTC), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2832-8
Electronic_ISBN :
1091-5281
DOI :
10.1109/IMTC.2010.5488038
