Title :
State space models of diode and bipolar transistor for simulation of power converters
Author_Institution :
IUT de Nantes, France
Abstract :
The perfecting of the digital control and regulation loops of power converters cannot be done without a simulation phase. The aim of this paper is to show the behavioural approach of components through a model described in the state-space by an inner model, in order to allow the identification of the parameters of the model from experimental curves
Keywords :
bipolar transistor switches; circuit analysis computing; parameter estimation; power bipolar transistors; power convertors; power engineering computing; power semiconductor diodes; power semiconductor switches; semiconductor device models; state-space methods; switching circuits; bipolar transistors; component behaviour approach; parameters identification; power converters; power semiconductor diode; simulation phase; state-space models; Bipolar transistors; Circuit simulation; Circuit testing; Electric resistance; Electric variables control; Inductance; Mathematical model; Semiconductor diodes; State-space methods; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548804
