Title :
The TeraMOS sensor for monolithic passive THz imagers
Author :
Corcos, D. ; Brouk, I. ; Malits, M. ; Svetlitza, A. ; Stolyarova, S. ; Abramovich, A. ; Farber, E. ; Bachar, N. ; Elad, D. ; Nemirovsky, Y.
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SOI (Silicon-on-Insulator) and MEMS/NEMS (Micro/Nano Electro Mechanical Systems). By introducing the TeraMOS sensor, which may be directly integrated with the CMOS-SOI readout circuitry, we expect to achieve a breakthrough in Terahertz passive imaging (0.5-1.5 THz) both in performance and cost. NEP (Noise Equivalent Power) of the order of 1 pW/Hz1/2 and NETD (Noise Equivalent Temperature Difference) of ~0.5K is expected at room temperature. Preliminary electro-optical measurements are presented.
Keywords :
CMOS image sensors; MIS devices; electro-optical devices; microsensors; nanosensors; silicon-on-insulator; submillimetre wave imaging; terahertz wave detectors; terahertz wave imaging; CMOS-SOI readout circuit; MEMS-NEMS; NEP; NETD; THz photonic; electrooptical measurement; frequency 0.5 THz to 1.5 THz; micro-nanoelectromechanical system; monolithic passive THz imaging; noise equivalent power; noise equivalent temperature difference; silicon-on-insulator; temperature 293 K to 298 K; teraMOS sensor; Antennas; Current measurement; Imaging; Optical filters; Optical sensors; Temperature measurement; Temperature sensors; CMOS-SOI-NEMS; FSS; Terahertz antennas; Terahertz sensors;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4577-1692-8
DOI :
10.1109/COMCAS.2011.6105883
