Title :
Advanced piezoelectric crystal Ca3TaGa3Si2O14: Growth, crystal structure perfection, piezoelectric and acoustic properties
Author :
Roshchupkin, D.V. ; Irzhak, D.V. ; Emelin, E.V. ; Fahrtdinov, R.R. ; Plotitsyna, O.A. ; Sakharov, S.A. ; Buzanov, O.A. ; Zabelin, A.N.
Author_Institution :
Inst. of Microelectron. Technol. & High-Purity Mater., Chernogolovka, Russia
Abstract :
A five-component crystal of lanthanum-gallium silicate family Ca3TaGa3Si2O14 (CTGS) was grown by the Czochralski method. The CTGS crystal, like langasite crystals La3Ga5SiO14, possesses unique temperature properties and the fewer number of the Ga atoms in the unit cell makes the density much lower and, consequently, increases the velocity of acoustic wave propagation. The unit cell parameters were determined by the powder diffraction technique. The defects in the CTGS crystal structure were studied by X-ray topography which enables the visualization of growth banding characteristics of crystal grown by Czochralski method. Surface acoustic wave (SAW) propagation in the CTGS crystal was investigated by the high-resolution X-ray diffraction method. The velocities of propagation and power flow angles of SAW in the Yand X-cuts of the CTGS crystal were determined from the X-ray diffraction spectra.
Keywords :
X-ray diffraction; X-ray topography; acoustic wave propagation; calcium compounds; crystal defects; crystal growth from melt; crystal structure; gallium compounds; piezoelectricity; surface acoustic waves; tantalum compounds; Ca3TaGa3Si2O14; Czochralski method; SAW; X-ray topography; acoustic properties; crystal structure; defects; density; high-resolution X-ray diffraction; langasite crystals; lanthanum-gallium silicate crystal; piezoelectric crystal; piezoelectric properties; surface acoustic wave propagation; unit cell parameters; velocity; Crystals; Diffraction; Satellites; Surface acoustic waves; Surface topography; X-ray diffraction; Ca3TaGa3Si2O14; SAW; SAW velocity; X-ray diffraction;
Conference_Titel :
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4673-4561-3
DOI :
10.1109/ULTSYM.2012.0684