• DocumentCode
    2686323
  • Title

    Progress in SiGe heterostructure devices

  • Author

    König, U.

  • Author_Institution
    Res. Center, Daimler-Chrysler AG, Ulm, Germany
  • fYear
    1999
  • fDate
    36186
  • Firstpage
    42522
  • Lastpage
    42527
  • Abstract
    Since a few years SiGe/Si heterodevices have entered the semiconductors world. In particular, the SiGe heterobipolar transistor (SiGe HBT) has demonstrated a record fmax value of 160 GHz. The SiGe hetero-field effect transistor (SiGe HFET) is presently catching up in performance with a speed of 120 GHz. This paper reviews device and circuit results. An important issue is the compatibility to the dominating silicon technology which opens perspectives for new generations of high volume and low cost microelectronic components
  • Keywords
    heterojunction bipolar transistors; 120 GHz; 160 GHz; SiGe-Si; SiGe/Si heterostructure device; hetero-field effect transistor; heterobipolar transistor; microelectronic component; semiconductor;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Advances in Semiconductor Devices (Ref. No. 1999/025), IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19990154
  • Filename
    755816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2686323