مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

2686323

Title :

Progress in SiGe heterostructure devices

Author :

König, U.

Author_Institution :

Res. Center, Daimler-Chrysler AG, Ulm, Germany

fYear :

1999

fDate :

36186

Firstpage :

42522

Lastpage :

42527

Abstract :

Since a few years SiGe/Si heterodevices have entered the semiconductors world. In particular, the SiGe heterobipolar transistor (SiGe HBT) has demonstrated a record f_max value of 160 GHz. The SiGe hetero-field effect transistor (SiGe HFET) is presently catching up in performance with a speed of 120 GHz. This paper reviews device and circuit results. An important issue is the compatibility to the dominating silicon technology which opens perspectives for new generations of high volume and low cost microelectronic components

Keywords :

heterojunction bipolar transistors; 120 GHz; 160 GHz; SiGe-Si; SiGe/Si heterostructure device; hetero-field effect transistor; heterobipolar transistor; microelectronic component; semiconductor;

fLanguage :

English

Publisher :

iet

Conference_Titel :

Advances in Semiconductor Devices (Ref. No. 1999/025), IEE Colloquium on

Conference_Location :

London

Type :

conf

DOI :

10.1049/ic:19990154

Filename :

755816

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2686323