DocumentCode :
2686340
Title :
Metamorphic GaAs HEMTs with fT of 200 GHz
Author :
Edgar, D.L. ; Cameron, N.I. ; McLelland, H. ; Holland, M.C. ; Taylor, M.R.S. ; Thayne, I.G. ; Stanley, C.R. ; Beaumont, S.P.
Author_Institution :
Nanoelectron. Res. Centre, Glasgow Univ., UK
fYear :
1999
fDate :
36186
Firstpage :
42552
Lastpage :
42556
Abstract :
We report the RF performance of 0.12 μm T-gate GaAs based metamorphic HEMTs with a composite In0.53Ga0.47As/In0.30Ga0.70 As channel. 2×50 μm wide devices demonstrated an fT of 200 GHz, the highest of any three terminal GaAs based device reported to date. In addition, 2×25 μm devices demonstrated 9.0 dB MAG at 94 GHz showing the W-band capability of GaAs based metamorphic HEMTs
Keywords :
gallium arsenide; 0.12 micron; 200 GHz; 9.0 dB; 94 GHz; GaAs; In0.53Ga0.47As-In0.30Ga0.70As; MAG; RF characteristics; T-gate; W-band; composite channel; cut-off frequency; metamorphic GaAs HEMT; three terminal device;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Advances in Semiconductor Devices (Ref. No. 1999/025), IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19990155
Filename :
755817
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2686340
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