Measurement of the Si atom density in RF silane plasma using absorption spectroscopy

Author

Goto, Tetsu ; Sakakibara, M. ; Hiramatsu, Masami

fYear

1990

fDate

21-23 May 1990

Firstpage

200

Lastpage

201

Abstract

Summary form only given. The Si atom densities at two levels (3p² ³P₂ and 3p ² ¹D₂) in on-off modulated RF (13.56-MHz) SiH₄/Ar plasma have been measured using an UV absorption method. The silane concentration was varied in the wide region of 5 to 100% to investigate the behavior of the two Si densities in the gas mixture. The conventional RF CVD system with plane parallel electrodes of 10-cm diameter and 3.2-cm interval was used. The RF power was modulated by a square wave of 1.3-ms on-time and 480-Hz repetition rate to remove the disturbance by powder in the plasma and improve the signal-to-noise ratio. The Si atom densities at the two levels are shown as a function of silane concentration in the SiH₄/Ar gas mixture. They decrease with the increase in SiH₄ concentration

Keywords

plasma density; plasma diagnostics; silicon; silicon compounds; ultraviolet spectra; 1.3 ms; 10 cm; 13.56 MHz; 3.2 cm; 3p² ¹D₂; 3p² ³P₂; CVD system; RF plasma; Si atom density; SiH₄; SiH₄-Ar; UV absorption method; absorption spectroscopy; concentration; gas mixture; on-off modulation; plane parallel electrodes; signal-to-noise ratio;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1990. IEEE Conference Record - Abstracts., 1990 IEEE International Conference on

Conference_Location

Oakland, CA, USA

Type

conf

DOI

10.1109/PLASMA.1990.110820

Filename

5726090