Title :
A 1 Watt 28 GHz Band Amplifier Using Clustered FETs
Author :
Takagi, T. ; Seine, K. ; Iida, A. ; Kobiki, M. ; Mitsui, Y. ; Takeda, F.
Abstract :
The clustered FET operating at Ka-band, in which four FET cells with 800 µm gate width are combined by the new 4-way monolithic combiner, has been developed. The amplifier using these clustered FETs has been demonstrated with more than 1 watt power output with 6 dB associated gain over 27.6 - 29.3 GHz.
Keywords :
Bonding; FETs; Gain; High power amplifiers; Impedance; Power amplifiers; Power generation; Radio frequency; Resistors; Wire;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1131975
