Computational large-signal analysis of p-type low-high-low InP IMPATT diodes

Author

El-Badawy, El-Sayed A. ; Ibrahim, Said H.

Author_Institution

Fac. of Eng., Alexandria Univ., Egypt

Volume

2

fYear

2000

fDate

2000

Firstpage

33

Abstract

Due to its superiority, regarding the velocity-field characteristic, the performance of n-type InP IMPATT diodes has been extensively studied. On the other hand, the performance of the p-type IMPATT diodes is not sufficiently studied. The investigation of p-type IMPATT diodes is necessary for the design and optimization of low-high-low InP IMPATT diodes and for the optimum design of the microwave circuit where the IMPATT diode is embedded. This paper presents the results of a detailed computational study of p-type InP IMPATT diodes. These results are obtained using our computer simulation program that takes fully into account the non-linearities and all the physical effects pertinent to the IMPATT diode operation. Some important conclusions concerning the effect of the peak value of the microwave signal on the operation and performance of IMPATT diodes are drawn out

Keywords

III-V semiconductors; IMPATT diodes; indium compounds; microwave diodes; III V semiconductor; InP; computational large-signal analysis; computer simulation program; microwave circuit; microwave signal peak signal; nonlinearities; optimum design; p-type IMPATT diodes; p-type low-high-low IMPATT diodes; performance; velocity-field characteristic; Computer science; Design optimization; Diodes; Doping; Indium phosphide; Microwave circuits; Ohmic contacts; Physics computing; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2000. Proceedings

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-6355-8

Type

conf

DOI

10.1109/TENCON.2000.888384

Filename

888384