DocumentCode
2686962
Title
A 0.5 µm Silicon Bipolar Transistor for Low Phase Noise Oscillator Applications Up to 20 GHz
Author
Leung, C.C. ; Snapp, C.P. ; Grande, V.
fYear
1985
fDate
4-6 June 1985
Firstpage
383
Lastpage
386
Abstract
An interdigitated silicon bipolar transistor with 0.5 micrometer emitter width and 2 micrometer emitter-emitter pitch has been fabricated which has a measured Fmax greater than 30 GHz. Low phase noise YIG-tuned oscillators with fundamental frequency bands of 4-18 and 8-22 GHz have been demonstrated using this transistor.
Keywords
Bipolar transistors; Bonding; Capacitance; Contact resistance; Frequency; Oscillators; Phase noise; Scattering parameters; Silicon; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1131990
Filename
1131990
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