A new modeling and parameter extraction technique for uni-directional high-voltage MOS devices

In this paper, a new method of modeling uni-directional HV MOS device based on the common BSIM3V3 model is presented. We propose to assign physical meanings and values of three model parameters different from the original BSIM3V model based on BSIM3V3 user manual (1995) but not change any equation of it to model the characteristics of uni-directional HV MOS devices. The way of accurate parameters extraction is given later. At last we show the simulation results using the proposed model, which fit the measured results very well proving the effectiveness of this method.