Title :
A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers
Author :
Curtice, W.R. ; Ettenberg, M.
Abstract :
A nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data. The harmonic balance technique is used to develop the FET rf load-pull characteristics in an amplifier configuration under large signal operation. Computed and experimental load-pull results show good agreement.
Keywords :
Current measurement; Equivalent circuits; FETs; Frequency domain analysis; Frequency estimation; Gallium arsenide; MESFET circuits; Power amplifiers; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1131996
