DocumentCode
2687049
Title
A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers
Author
Curtice, W.R. ; Ettenberg, M.
fYear
1985
fDate
4-6 June 1985
Firstpage
405
Lastpage
408
Abstract
A nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data. The harmonic balance technique is used to develop the FET rf load-pull characteristics in an amplifier configuration under large signal operation. Computed and experimental load-pull results show good agreement.
Keywords
Current measurement; Equivalent circuits; FETs; Frequency domain analysis; Frequency estimation; Gallium arsenide; MESFET circuits; Power amplifiers; Radiofrequency amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1131996
Filename
1131996
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