Title :
Contiguous-Domain Transferred-Electron Oscillators
Author :
Cooper, J.A. ; Thornber, K.K.
Abstract :
We describe a new monolithic millimeter-wave semiconductor oscillator which is capable of supporting a contiguous sequence of charge domains in the drift channel. The frequency is not determined by a transit time effect, but rather by the spacing between adjacent domains, and can be electrically tuned from a few gigahertz to a few hundred gigahertz.
Keywords :
Electrons; Electrostatics; Gallium arsenide; Gunn devices; Microwave devices; Microwave oscillators; RLC circuits; Resonance; Resonant frequency; Tuned circuits;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1132001
