Isolated silicon platforms for high current power management integrated circuit applications

We describe modular voltage and current isolation schemes in a Power Management Integrated Circuit (PMIC) silicon platform. The isolation reduces the power dissipation during switching at the high side driver. It also suppresses the cross talk between power devices switching up to 60V at several Amps, and sensitive analog/digital circuitry on the same chip. Standard, buried layer and Isolated Drain isolation schemes allow a tradeoff between the isolation level and the process complexity of the platform. The different schemes allow a current suppression ratios of 10^-7 in the vicinity of the Power devices or better if guard rings are combined.