Title :
GaAs Monolithic Transferred-Electron Devices for Millimeter Wave Applications
Author :
Rolland, P.A. ; Cappy, A. ; Friscourt, M.R.
Abstract :
In this paper the authors point out the existence of two different operating modes in a planar GaAs transferred-electron oscillator with a current limiting MESFET cathode. The respective advantages and drawbacks of these two modes are discussed on the basis of further monolithic integration. The influence of the operating conditions on the RF performance are given in the 100 GHz window.
Keywords :
Cathodes; Current limiters; Gallium arsenide; Indium phosphide; MESFETs; Millimeter wave devices; Oscillators; Radio frequency; Schottky barriers; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1132002
