A CMOS low noise amplifier to operate at 900MHz

Author

Pinto Azevedo, J.A. ; Cleber Pimenta, T.

Author_Institution

Microelectron. Group, Univ. Fed. de Itajuba, Brazil

Volume

2

fYear

2003

fDate

21-24 Oct. 2003

Firstpage

1046

Abstract

The demand for portable wireless communications systems was pushed by the expansion of personal and business wireless services. As a result, portable devices tend to become cheaper, smaller and lighter with long lasting batteries. Those tendencies increased the focus on the implementation of RF integrated circuits using CMOS technology, which is continuously under speed evaluation pressure of the digital circuits. The high speedy of CMOS circuits allows integrated solutions to RF implementations. The implementation of an RF IC is very important since it meets the need of portable communication systems. This article describes the design of a low noise amplifier - LNA that is used in RF transceivers, in a 0.35μm CMOS process. The LNA is intended to be used in a receiver of a mobile CDMA station, working on the 824-984 MHz range, evaluated by the TIA/EIA/IS-98-A interim standard.

Keywords

CMOS digital integrated circuits; amplifiers; mobile handsets; radiofrequency integrated circuits; transceivers; 0.35 microns; 824 to 984 MHz; 900 MHz; CMOS circuits; CMOS low noise amplifier; CMOS process; CMOS technology; LNA; RF implementations; RF integrated circuits; RF transceivers; business wireless services; digital circuits; mobile CDMA station; personal wireless services; portable devices; portable wireless communications systems;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2003. Proceedings. 5th International Conference on

ISSN

1523-553X

Print_ISBN

0-7803-7889-X

Type

conf

DOI

10.1109/ICASIC.2003.1277391

Filename

1277391