GaN HEMT with scalable >2.2 kV breakdown voltage

AlGaN/GaN High Electron Mobility Transistors (HEMTs) are well recognized today as the best electron devices for power amplification in microwave frequency range for power transmitters and RADARs. GaN-based devices promise to have the best power performance not only in signal amplification area but also in huge area of power conversion. This paper describes what unique properties of GaN enable handling of high power levels at high frequencies, how GaN-based transistors empower new generation of power electronics and few key technologies and operation principles of GaN transistors for microwave and power electronics. The measurement results of AlGaN/GaN HEMTs without field plates with breakdown voltage higher than 2 kV are presented.