Title :
High performance SOI gate-bulk connected LCMOSFET for RF power amplifier application in short and medium range wireless communication systems
Author :
Guoyan Zhang ; Xin Sun ; Ru Huang ; Xing Zhang ; Yangyuan Wang
Author_Institution :
Dept. of Microelectron., Peking Univ., Beijing, China
Abstract :
A novel application of SOI gate-bulk connected (GBC) LDMOSFET for RF power amplifier in short and medium range wireless communication is proposed. This application allows the power transistor to give higher intrinsic gain, lower power consumption, boost driving current capability and increase breakdown voltage. The results show that the good performance of this novel application can be used in the design of RF transmitter.
Keywords :
power MOSFET; power amplifiers; power transistors; radiofrequency amplifiers; radiofrequency integrated circuits; silicon-on-insulator; LCMOSFET; RF power amplifier; RF transmitter; SOI gate-bulk; boost driving current capability; higher intrinsic gain; increase breakdown voltage; lower power consumption; medium range wireless communication systems; power transistor; short range wireless communication systems;
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
Print_ISBN :
0-7803-7889-X
DOI :
10.1109/ICASIC.2003.1277404
