Title :
The design of CMOS RF low noise amplifiers
Author :
Ke Cao ; Huazhong Yang ; Hui Wang
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
A design approach of CMOS radio frequency (RF) low noise amplifiers (LNAs) is presented in this paper. With short-channel MOSFET model, analytical model of the source degenerated amplifiers is derived and verified by simulation at 2.4GHz with 0.18μm technology. It is shown that low noise and low power may probably be achieved simultaneously. With the help of these models, the designer can not only get the optimal designs or quickly and intuitively dig out the problem of the circuitry.
Keywords :
CMOS integrated circuits; MOSFET; circuit simulation; low-power electronics; radiofrequency amplifiers; radiofrequency integrated circuits; 0.18 microns; 2.4 GHz; CMOS; LNA performance; RF low noise amplifiers; analytical model; circuit optimization; low power electronics; low-noise electronics; short-channel MOSFET model; source degenerated amplifiers;
Conference_Titel :
ASIC, 2003. Proceedings. 5th International Conference on
Print_ISBN :
0-7803-7889-X
DOI :
10.1109/ICASIC.2003.1277406
