DocumentCode :
2687603
Title :
Microstructural investigation on the interfacial evolution of SnBi/Cu interconnect during reflow and solid-state aging
Author :
Liu, Zhi-Quan ; Shang, Pan-Ju ; Pang, Xue-Yong ; Shang, Jian-Ku
Author_Institution :
Shenyang Nat. Lab. for Mater. Sci., Chinese Acad. of Sci., Shenyang
fYear :
2008
fDate :
28-31 July 2008
Firstpage :
1
Lastpage :
3
Abstract :
The microstructures of SnBi/Cu interconnect after reflow and its evolution during solid-state aging at 393 K were investigated using transmission electron microscopy (TEM). It was found that after reflow there were two kinds of intermetallic compounds (IMCs) - Cu6Sn5 and Cu3Sn in solder joint. Above these IMC layers there was a Bi-rich layer which consisted of discontinuous Bi particles. During solid state aging, the Cu3Sn phase grew faster into Cu substrate than into Cu6Sn5, and the Bi-rich layer did not change much. However, new Bi particles were observed at the Cu3Sn/Cu interface, which introduced interfacial voids around Bi particles. First principles calculation revealed that Bi segregation reduced the adhesion energy of Cu/Cu3Sn interface and caused serious reliability problem.
Keywords :
adhesion; ageing; bismuth alloys; copper alloys; discontinuous metallic thin films; eutectic alloys; integrated circuit interconnections; interface phenomena; reflow soldering; segregation; solders; tin alloys; transmission electron microscopy; wetting; SnBi-Cu; TEM; adhesion energy; discontinuous particles; interfacial evolution; interfacial voids; intermetallic compounds; microelectronics interconnections; microstructural investigation; reflow process; reliability problem; segregation mechanism; solder joint; solid-state aging; temperature 393 K; transmission electron microscopy; Aging; Bismuth; Copper; Integrated circuit interconnections; Materials science and technology; Milling; Scanning electron microscopy; Soldering; Solid state circuits; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-2739-0
Electronic_ISBN :
978-1-4244-2740-6
Type :
conf
DOI :
10.1109/ICEPT.2008.4607072
Filename :
4607072
Link To Document :
بازگشت