Title :
36.0 - 40.0 GHz HEMT Low Noise Amplifier
Author :
Shelley, Matthew ; Berenz, J. ; Nichols, A. ; Nakano, K. ; Sawires, R. ; Abell, J.
Abstract :
This paper describes the design and development of a multistage low noise High Electron Mobility Transistor (HEMT) amplifier that exhibits state-of-the-art performance over the frequency range of 36-40 GHz. The amplifier utilizes a series of three single ended stages that are each designed around TRW´s HEMT device. Typical performance to date has been 15-17 dB gain with an associated noise figure of 4.0 to 4.6 dB.
Keywords :
Fabrication; Frequency; Gallium arsenide; HEMTs; Lithography; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Performance gain;
Conference_Titel :
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location :
St. Louis, MO, USA
DOI :
10.1109/MWSYM.1985.1132037
