A 34 Mb 3.3 V serial flash EEPROM for solid-state disk applications

Author

Cernea, R. ; Lee, Dennis J. ; Mofidi, M. ; Chang, Edward Yi ; Wy-Yi Chien ; Goh, L. ; Yupin Fong ; Yuan, J.H. ; Samachisa, G. ; Guterman, D.C. ; Mehrotra, Sanjay ; Sato, Kiminori ; Onishi, Hiro ; Ueda, Kazunori ; Noro, F. ; Mijamoto, K. ; Morita, Minoru ;

Author_Institution

SunDisk Corp., Santa Clara, CA, USA

fYear

1995

fDate

15-17 Feb. 1995

Firstpage

126

Lastpage

127

Abstract

This 34 Mb 3.3 V serial flash EEPROM for solid state disk applications has on-board digitally-controlled power registers compatible to the existing serially-controlled command architecture. A bank of high-linearity current-referenced DACs with fast-slewing regulated supply buffers creates multiple internal voltage sources that are completely accessible (and measurable) by the dedicated external controller. Also, new to this design is a verify (VFY) function that operates simultaneously with programming (PGM) and eliminates the need for an iterative PGM/VFY sequence. The die is fabricated using a triple poly single metal twin well 0.55 /spl mu/m CMOS process with memory cell size of 2.1 /spl mu/m/sup 2/.

Keywords

EPROM; 0.55 micron; 3.3 V; 34 Mbit; Si; current-referenced DACs; fast-slewing regulated supply buffers; multiple internal voltage sources; onchip digitally-controlled power registers; serial flash EEPROM; serially-controlled command architecture; solid-state disk applications; triple poly single metal process; twin well CMOS process; verify function; Current measurement; EPROM; Functional programming; Lifting equipment; Power generation; Registers; Semiconductor device measurement; Solid state circuits; System-on-a-chip; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-2495-1

Type

conf

DOI

10.1109/ISSCC.1995.535459

Filename

535459