Title :
A 34 Mb 3.3 V serial flash EEPROM for solid-state disk applications
Author :
Cernea, R. ; Lee, Dennis J. ; Mofidi, M. ; Chang, Edward Yi ; Wy-Yi Chien ; Goh, L. ; Yupin Fong ; Yuan, J.H. ; Samachisa, G. ; Guterman, D.C. ; Mehrotra, Sanjay ; Sato, Kiminori ; Onishi, Hiro ; Ueda, Kazunori ; Noro, F. ; Mijamoto, K. ; Morita, Minoru ;
Author_Institution :
SunDisk Corp., Santa Clara, CA, USA
Abstract :
This 34 Mb 3.3 V serial flash EEPROM for solid state disk applications has on-board digitally-controlled power registers compatible to the existing serially-controlled command architecture. A bank of high-linearity current-referenced DACs with fast-slewing regulated supply buffers creates multiple internal voltage sources that are completely accessible (and measurable) by the dedicated external controller. Also, new to this design is a verify (VFY) function that operates simultaneously with programming (PGM) and eliminates the need for an iterative PGM/VFY sequence. The die is fabricated using a triple poly single metal twin well 0.55 /spl mu/m CMOS process with memory cell size of 2.1 /spl mu/m/sup 2/.
Keywords :
EPROM; 0.55 micron; 3.3 V; 34 Mbit; Si; current-referenced DACs; fast-slewing regulated supply buffers; multiple internal voltage sources; onchip digitally-controlled power registers; serial flash EEPROM; serially-controlled command architecture; solid-state disk applications; triple poly single metal process; twin well CMOS process; verify function; Current measurement; EPROM; Functional programming; Lifting equipment; Power generation; Registers; Semiconductor device measurement; Solid state circuits; System-on-a-chip; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2495-1
DOI :
10.1109/ISSCC.1995.535459
