DocumentCode
2687915
Title
A novel BiMOS switch for use in switched-capacitor filters
Author
Abu-Khater, I.S. ; El-Masry, E.I.
fYear
1989
fDate
15-18 May 1989
Abstract
The design of a high-performance BiMOS switch in 3-μm double-level-metal technology is presented. The switch makes use of the p-well as an isolation layer for the n-p-n transistor. SPICE simulations of the proposed switch have indicated that the rise and fall ON resistance is about 500 Ω. This switch is intended for use in switched-capacitor filter applications. The switch has been submitted for fabrication
Keywords
BIMOS integrated circuits; active filters; switched capacitor filters; 3 micron; 500 ohm; BiMOS switch; ON resistance; double-level-metal technology; isolation layer; n-p-n transistor; p-well; switched-capacitor filter applications; switched-capacitor filters;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/CICC.1989.56709
Filename
5726177
Link To Document