Title :
BiNMOS: a basic cell for BiCMOS sea-of-gates
Author :
El Gamal, Abbas ; Kouloheris, Jack L. ; How, Dana ; Morf, Martin
Abstract :
A BiNMOS test chip has been designed and fabricated in 0.8-μm BiCMOS technology. The test chip consists of a 4×22 array of BiNMOS cells. The test structures include a ring oscillator, a 4-bit SRAM (static random-access memory) core, five types of buffers, a MUX, and a shift register. Ring oscillator measurements indicate a basic BiNMOS inverter delay of 240 ps (FO=1), a result that agrees well with simulation
Keywords :
BIMOS integrated circuits; logic arrays; random-access storage; 0.8 micron; 240 ps; BiCMOS sea-of-gates; BiNMOS test chip; MUX; SRAM; basic cell; buffers; inverter delay; ring oscillator; shift register;
Conference_Titel :
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/CICC.1989.56710
