Title :
An improved I-V model of small geometry MOSFETs for SPICE
Author :
Chung, Steve S. ; Lin, T.S. ; Chen, Y.G.
Abstract :
A description is given of a computationally efficient SPICE model for accurate prediction of the I-V and threshold voltage characteristics of small-geometry MOSFETs. The model based on an enhancement of the SPICE LEVEL3 MOS model and a novel approach of parameter extraction. The expressions achieved for the drain currents hold in the weak inversion, strong inversion, and saturation regimes of operation. The model supports the design of both short-channel and narrow-gate MOSFETs with any kind of implanted channel. Accuracy and benchmark tests show substantial improvements over the original LEVEL3 model
Keywords :
circuit CAD; insulated gate field effect transistors; semiconductor device models; LEVEL3 model; SPICE; SPICE LEVEL3 MOS model; benchmark tests; computationally efficient; drain currents; improved I-V model; narrow-gate; parameter extraction; saturation regimes; short-channel; small geometry MOSFETs; strong inversion; threshold voltage characteristics; weak inversion;
Conference_Titel :
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/CICC.1989.56723
