DocumentCode
2688148
Title
A three-transistor model for submicron MOSFET
Author
Wong, S.C. ; Lin, H.C.
fYear
1989
fDate
15-18 May 1989
Abstract
A three-transistor model is presented for simulating threshold voltage reduction due to the charge-sharing effect and damage induced degradation in submicrometer MOSFETs. The channel behavior is treated with three MOSFETs in series. These MOSFETs have different threshold voltages and mobilities due to charge sharing and surface damage. An analytic solution is derived, and the results agree with MINIMOS2 and experimental data. This model is simpler and more computationally efficient for circuit simulation than the usual 2-D numerical modeling approaches
Keywords
insulated gate field effect transistors; semiconductor device models; 2-D numerical modeling; MINIMOS2; charge-sharing effect; circuit simulation; computationally efficient; damage induced degradation; submicron MOSFET; surface damage; three-transistor model; threshold voltage reduction;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/CICC.1989.56724
Filename
5726191
Link To Document