• DocumentCode
    2688325
  • Title

    Spectra of holes in a quantum well GexSi1-x on Si(001) substrates

  • Author

    Makarov, Evgeny A. ; Sychev, Andrey Y.

  • Author_Institution
    Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Russia
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    43
  • Lastpage
    47
  • Abstract
    The extremes of valley energy in stressed layers of GexSi1-x on Si (001) substrates are calculated and analysed. The calculations show that the bottom of a conduction band settles down in the 2Δ-valley, and the light hole band is located above the heavy hole band at any value of x. The effects of dimensional quantization gives a diminution of distance between valleys of light and heavy holes, and this effect amplifies for higher Ge content
  • Keywords
    Ge-Si alloys; Schrodinger equation; conduction bands; hole density; semiconductor quantum wells; two-dimensional electron gas; valence bands; (001) substrates; 2D hole gas; GeSi-Si; Schrodinger equation; Si; conduction band bottom; dimensional quantization effect; effective mass; heavy hole band; hole mobility; hole spectra; light hole band; quantum well; spin-orbit splitting; stressed layers; valence band; valley energy extremes; Anisotropic magnetoresistance; Charge carrier processes; Charge carriers; Elasticity; Electron mobility; FETs; Germanium silicon alloys; Lattices; Silicon germanium; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    5-7782-0291-1
  • Type

    conf

  • DOI
    10.1109/SREDM.2000.888536
  • Filename
    888536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2688325