Interfacial reaction and failure mechanism for SnAgCu solder bump with Ni(V)/Cu under bump metallization during aging

Author

Wang, Kai Jheng ; Duh, Jenq Gong

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu

fYear

2008

fDate

28-31 July 2008

Firstpage

1

Lastpage

5

Abstract

In this study, Sn3.0Ag0.5Cu solder bump was jointed on Ni(V)/Cu UBM and then aged at 125 degC for 500-2000 h. The heat treatment samples were employed to investigate the interfacial reaction and the mechanical properties between solder and UBM. (Cu,Ni)6Sn5 IMC formed at the interface between solder and Ni(V) layer after assembly. The thickness of (Cu,Ni)6Sn5 gradually increased to 4 mum during aging at 200degC for 2000 h.The mechanical properties for solder joints were estimated with a XYZTEC bond tester. Scanning electron microscope images of the crack surface after testing provided the information for failure modes analysis. The relations between interfacial reaction and mechanical properties would be discussed. Furthermore, the possible failure mechanism was proposed.

Keywords

ageing; copper alloys; electronics packaging; failure (mechanical); flip-chip devices; heat treatment; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; interface phenomena; metallic thin films; multilayers; nickel alloys; silver alloys; solders; tin alloys; vanadium alloys; Ni-V-Cu; SnAgCu; aging condition; failure mechanism; flip chip technology; heat treatment samples; interfacial reaction; intermetallic compounds; mechanical properties; mechanical testing methods; multimetallic thin-films; packaging reliability; pull test; shear test; solder bump; temperature 125 C; time 500 h to 2000 h; under bump metallization; Aging; Assembly; Bonding; Electrons; Failure analysis; Heat treatment; Mechanical factors; Metallization; Soldering; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-2739-0

Electronic_ISBN

978-1-4244-2740-6

Type

conf

DOI

10.1109/ICEPT.2008.4607117

Filename

4607117