Fabrication of Si and SiGe vertical dual carrier field effect transistor and its SOI resistor load switching ASIC with effective channel length of 30nm

Author

Li, G.H. ; Yang, Roger ; Tang, Z.M. ; Yang, Young Hwi ; Han, D.J. ; Huang, D.H. ; Xu, Peng ; Xu, Y.Z. ; Zhang, J.C. ; Lin, C.L. ; Wu, C.L. ; Chen, Bo-Wei ; Yan, F.Z. ; Ren, Y.L. ; Yu, L.K. ; Cai, I.M. ; Tian, X.N. ; Du, S.C. ; Huang, Chao

Author_Institution

Beijing Normal Univ., China

Volume

2

fYear

2003

fDate

21-24 Oct. 2003

Firstpage

1341

Abstract

Fabrication of Si and SiGe vertical dual carrier field effect transistor (VDCFET) with effective channel length of 30nm, using lithographic equipment for linewidths greater than 180nm, is presented. The main process of fabrication used is ion implantation for Si VDCFET. The main process of fabrication used is molecular beam epitaxy for SiGe VDCFET. Fabrication of SOI switching VDCFET flip flop with effective channel length of 30nm, using lithographic equipment for linewidths greater than 180nm, is also presented.

Keywords

application specific integrated circuits; elemental semiconductors; field effect transistors; ion implantation; molecular beam epitaxial growth; semiconductor device manufacture; silicon compounds; silicon-on-insulator; 30 nm; ASIC; SOI resistor load switching; SiGe; VDCFET; flip flop; ion implantation; lithographic equipment; molecular beam epitaxy; vertical dual carrier field effect transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2003. Proceedings. 5th International Conference on

ISSN

1523-553X

Print_ISBN

0-7803-7889-X

Type

conf

DOI

10.1109/ICASIC.2003.1277465

Filename

1277465