DocumentCode :
2688493
Title :
Electromigration simulation with consideration of the atomic concentration gradient
Author :
Chen, Xuefan ; Liang, Lihua ; Liu, Yong
Author_Institution :
Fairchild-ZJUT Joint Lab., Zhejiang Univ. of Technol., Hangzhou
fYear :
2008
fDate :
28-31 July 2008
Firstpage :
1
Lastpage :
7
Abstract :
An enhanced finite element modeling methodology based on commercial software ANSYS Multi-physics and FORTRAN code is developed for the simulation of electromigration. The electronic migration formulation taking into account the effects of the atomic concentration gradient (ACG) has been developed to show the difference in the electromigration (EM) failure mechanisms. An improved algorithm of total atomic flux and corresponding EM formulation are presented with the electro-migration, the thermo-migration, the stress-migration and the atomic concentration gradient migration. The interaction of the various driving forces during the EM process is investigated. Finite element simulations are performed for solder joints under high current density with and without consideration of atomic concentration gradient. Simulations show that atomic concentration gradient migration canpsilat be ignored. It is also found that the atomic concentration distribution majority depends on the current density, atomic concentration gradient and the stress gradient of the structure.
Keywords :
current density; electromigration; finite element analysis; integrated circuit metallisation; solders; ANSYS Multiphysics; FORTRAN code; atomic concentration gradient migration; current density; electromigration failure mechanisms; electronic migration formulation; finite element modeling; metallization structures; solder joints; stress gradient; stress-migration; thermomigration; total atomic flux; Atomic measurements; Current density; Electromigration; Electrons; Equations; Failure analysis; Finite element methods; Metallization; Soldering; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-2739-0
Electronic_ISBN :
978-1-4244-2740-6
Type :
conf
DOI :
10.1109/ICEPT.2008.4607121
Filename :
4607121
Link To Document :
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