DocumentCode
2688518
Title
Possibility of combined use of neuron-MOS and RTD in multi-valued logic circuits
Author
Yue Cheng ; Jun Xu
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
2
fYear
2003
fDate
21-24 Oct. 2003
Firstpage
1357
Abstract
In this paper, the possibility of combined use of neuron-MOS and resonant tunnelling diode is investigated. Two application examples in MVL circuits are described. Three basic forms of combined use are proposed. The advantages and disadvantages are analyzed.
Keywords
MOS integrated circuits; logic design; multivalued logic circuits; resonant tunnelling diodes; MVL circuits; RTD; multivalued logic circuits; neuron-MOS; resonant tunnelling diode;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2003. Proceedings. 5th International Conference on
ISSN
1523-553X
Print_ISBN
0-7803-7889-X
Type
conf
DOI
10.1109/ICASIC.2003.1277469
Filename
1277469
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