• DocumentCode
    2688531
  • Title

    Switching disturbance due to source inductance for a power MOSFET: analysis and solutions

  • Author

    Merienne, F. ; Roudet, J. ; Schanen, Jl

  • Author_Institution
    Lab. d´´Electrotech. de Grenoble, CNRS, St. Martin d´´Heres, France
  • Volume
    2
  • fYear
    1996
  • fDate
    23-27 Jun 1996
  • Firstpage
    1743
  • Abstract
    In this paper some technological rules are given, in order to help the designer to choose correct parameter values (such as gate resistance), avoiding MOSFET switching disturbance due to common impedance coupling. The switching process is modeled, and the good understanding of switching disturbance leads to the desired technological rules, taking into account the MOSFET implementation (source inductance Ls)
  • Keywords
    choppers (circuits); chopper structure; common impedance coupling; gate resistance; power MOSFET; source inductance; switching disturbance; technological rules; Capacitors; Choppers; Coupling circuits; Diodes; Impedance; Inductance; MOSFET circuits; Pareto analysis; Power MOSFET; SPICE;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
  • Conference_Location
    Baveno
  • ISSN
    0275-9306
  • Print_ISBN
    0-7803-3500-7
  • Type

    conf

  • DOI
    10.1109/PESC.1996.548816
  • Filename
    548816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2688531