Title :
Switching disturbance due to source inductance for a power MOSFET: analysis and solutions
Author :
Merienne, F. ; Roudet, J. ; Schanen, Jl
Author_Institution :
Lab. d´´Electrotech. de Grenoble, CNRS, St. Martin d´´Heres, France
Abstract :
In this paper some technological rules are given, in order to help the designer to choose correct parameter values (such as gate resistance), avoiding MOSFET switching disturbance due to common impedance coupling. The switching process is modeled, and the good understanding of switching disturbance leads to the desired technological rules, taking into account the MOSFET implementation (source inductance Ls)
Keywords :
choppers (circuits); chopper structure; common impedance coupling; gate resistance; power MOSFET; source inductance; switching disturbance; technological rules; Capacitors; Choppers; Coupling circuits; Diodes; Impedance; Inductance; MOSFET circuits; Pareto analysis; Power MOSFET; SPICE;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548816
