Title :
The thermodynamic analysis of tri-isopropoxyaluminium pyrolysis
Author :
Tomilin, Vladimir I. ; Shumeyev, Vasiliy N.
Author_Institution :
Krasnoyarsk State Tech. Univ., Russia
Abstract :
The purpose of this paper is a theoretical examination of Al(OC 3H7)3 pyrolysis and finding of thermodynamic quantities which are necessary for optimal technological modes of pure Al2O3 films production on a GaAs surface
Keywords :
MOCVD; alumina; enthalpy; entropy; free energy; heat of formation; organometallic compounds; pyrolysis; Al2O3; GaAs; Gibbs energy; alumina films production; contamination elimination; enthalpy; entropy; optimal technological modes; temperature dependence; thermodynamic analysis; tri-isopropoxyaluminium pyrolysis; vapour pressure; Aluminum oxide; Chemical analysis; Chemical technology; Coatings; Contamination; Impedance; Optimized production technology; Solid state circuits; Temperature; Thermodynamics;
Conference_Titel :
Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0291-1
DOI :
10.1109/SREDM.2000.888558