Title :
4.0 Gb/s NMOS laser driver
Author :
Shastri, K.R. ; Yanushefski, K.A. ; Hokanson, J.L. ; Yanushefski, M.J.
Abstract :
A 4.0-GB/s NMOS laser driver has been designed and fabricated in 0.75-μm technology with a typical Leff=0.65 μm. The IC provides an adjustable modulation current pulse of 20-60 mA into an equivalent 25-Ω load. The rise and fall times (10 to 90%) are approximately 70 ps and 120 ps, respectively with a V DD=3.3 V±10%
Keywords :
driver circuits; field effect integrated circuits; laser accessories; optical modulation; pulse generators; semiconductor junction lasers; 0.75 micron; 120 ps; 20 to 60 mA; 4 Gbit/s; 70 ps; NMOS; adjustable modulation current pulse; fall time; laser driver; rise time; semiconductor diode lasers;
Conference_Titel :
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/CICC.1989.56756
