DocumentCode :
2688749
Title :
4 Gb/s ECL gate masterslice
Author :
Tamamura, Masaya ; Emori, Shinji ; Watanabe, Yoshio ; Shimotsuhama, Lsao ; Kikuchi, Naoyoshi ; Ishibashi, Wataru ; Tachibana, Kaoru
fYear :
1989
fDate :
15-18 May 1989
Abstract :
The authors present a novel semicustom IC called the gate masterslice, which enables a clear eye pattern to be obtained for high-bit-rate signals. Key design features of the gate masterslice are: an advanced Si bipolar process, chip structure that reduces signal interference rather than increasing gate density, and internal connection using only the second metal layer
Keywords :
application specific integrated circuits; cellular arrays; emitter-coupled logic; logic arrays; 4 Gbit/s; ASIC; ECL; advanced Si bipolar process; chip structure; emitter coupled logic; gate masterslice; high-bit-rate signals; internal connection; second metal layer; semicustom IC; signal interference reduction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location :
San Diego, CA, USA
Type :
conf
DOI :
10.1109/CICC.1989.56757
Filename :
5726224
Link To Document :
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