DocumentCode :
2688847
Title :
High performance gate drives for utilizing the IGBT in the active region
Author :
Githiari, A.N. ; Leedham, R.J. ; Palmer, P.R.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Volume :
2
fYear :
1996
fDate :
23-27 Jun 1996
Firstpage :
1754
Abstract :
The advantages of operating the IGBT in its active region for active snubbing and series operation have been established in the literature. In this paper we describe the implementation and performance of several gate drive circuits suitable for use in closed loop control of the IGBT voltage. The application of the gate drives to active control of a wide range of IGBT devices is demonstrated and discussed
Keywords :
driver circuits; insulated gate bipolar transistors; power semiconductor switches; protection; snubbers; switching circuits; voltage control; IGBT; IGBT voltage control; active control; active region; active snubbing; closed loop control; gate drive circuits; high performance gate drives; series operation; Circuits; Drives; Energy consumption; Frequency; Inductors; Insulated gate bipolar transistors; MOSFETs; Operational amplifiers; Semiconductor optical amplifiers; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
ISSN :
0275-9306
Print_ISBN :
0-7803-3500-7
Type :
conf
DOI :
10.1109/PESC.1996.548818
Filename :
548818
Link To Document :
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