Title :
High performance gate drives for utilizing the IGBT in the active region
Author :
Githiari, A.N. ; Leedham, R.J. ; Palmer, P.R.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
The advantages of operating the IGBT in its active region for active snubbing and series operation have been established in the literature. In this paper we describe the implementation and performance of several gate drive circuits suitable for use in closed loop control of the IGBT voltage. The application of the gate drives to active control of a wide range of IGBT devices is demonstrated and discussed
Keywords :
driver circuits; insulated gate bipolar transistors; power semiconductor switches; protection; snubbers; switching circuits; voltage control; IGBT; IGBT voltage control; active control; active region; active snubbing; closed loop control; gate drive circuits; high performance gate drives; series operation; Circuits; Drives; Energy consumption; Frequency; Inductors; Insulated gate bipolar transistors; MOSFETs; Operational amplifiers; Semiconductor optical amplifiers; Voltage control;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548818
