DocumentCode
2688851
Title
13000 gate ECL compatible GaAs gate array
Author
Larkin, Bill ; Canaga, Shelly ; Lee, Gary ; Terrell, Bill ; Deyhimy, Ira
fYear
1989
fDate
15-18 May 1989
Abstract
A 13000-gate ECL (emitter-couples logic)-compatible gate array implemented in a proprietary self-aligned gate enhanced/depletion GaAs MESFET technology is described. This device operates from a single 2-V power supply and contains 196 ECL-compatible I/O ports. The device features 120-ps gate-delays and flip-flop toggle rates in excess of 1 GHz while dissipating typically 5 W of power
Keywords
III-V semiconductors; Schottky gate field effect transistors; emitter-coupled logic; field effect integrated circuits; gallium arsenide; logic arrays; 1 GHz; 120 ps; 2 V; 5 W; ECL compatible logic array; ECL-compatible I/O ports; GaAs gate array; III-V semiconductors; SAG enhancement/depletion MESFET technology; flip-flop toggle rates; gate-delays; self-aligned gate; single power supply operation;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/CICC.1989.56764
Filename
5726231
Link To Document