A low-voltage silicon bipolar RF front-end for PCN receiver applications

Author

Long, J.R. ; Copeland, M.A. ; Schvan, P. ; Hadaway, R.A.

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada

fYear

1995

fDate

15-17 Feb. 1995

Firstpage

140

Lastpage

141

Abstract

Monolithic microstrip transformers are used to perform the coupling and phase-splitting functions in a bipolar low-noise amplifier and mixer designed for 1.9GHz wireless receiver applications. These circuits are fabricated in a production 0.8/spl mu/m BiCMOS process with a transistor transit frequency of 11GHz. Using reactive feedback and coupling elements in place of resistors significantly improves the noise figure through the reduction of resistor thermal noise, and also allows both the low-noise amplifier and the mixer to operate at supply voltages below 2V.

Keywords

BiCMOS analogue integrated circuits; 0.8 micron; 1.9 GHz; 2 V; BiCMOS process; PCN receiver applications; Si; bipolar RF front-end; coupling functions; low-noise amplifier; mixer; monolithic microstrip transformers; noise figure; phase-splitting functions; reactive feedback; resistor thermal noise; supply voltages; transistor transit frequency; wireless receiver applications; Coupling circuits; Low-noise amplifiers; Microstrip; Noise figure; Personal communication networks; Production; Radio frequency; Resistors; Silicon; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-2495-1

Type

conf

DOI

10.1109/ISSCC.1995.535465

Filename

535465