• DocumentCode
    2688885
  • Title

    A Dual-Output Voltage Reference for high-accuracy pipelined ADC

  • Author

    Cheng, Dongfang ; Li, Xiaohui ; Zhang, Jue ; Wang, Jiongming

  • Author_Institution
    Key Lab. of Adv. Displays & Syst. Applic., Shanghai Univ., Shanghai
  • fYear
    2008
  • fDate
    28-31 July 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A dual-output voltage bandgap reference has been designed for high-accuracy pipelined ADC with CSMC0.6 process technology in this work. Based on the temperature and noise analyzing of voltage reference, the traditional circuit has been improved. The structure with two PN junctions in series,non-operational amplifier structure and PTAT (proportional to absolute temperature) current supplied by ldquoself-biasrdquo cascode current mirror, were adopted in the circuit designed. A new method to divide voltage was suggested in this study. The simulation results showed that the dual-output voltages were 2.194 V and 1.098 V respectively when temperature varied from -10 degC to 100 degC, and the temperature coefficient is only 7.00 ppm/degC; the change of Vref only was 5.326 mV, and the PSRR was 49.3 dB when source voltage varied from 6 V to 9 V. The dual-output voltage reference of the circuit designed can meet the requirement of comparator input voltage in high-accuracy pipelined ADC.
  • Keywords
    analogue-digital conversion; current mirrors; reference circuits; PN junctions; analog-digital converters; cascode current mirror; non-operational amplifier; temperature -10 degC to 100 degC; voltage 1.098 V to 2.194 V; voltage 5.326 V; voltage 6 V to 9 V; voltage bandgap reference; Analog integrated circuits; Bipolar transistors; Breakdown voltage; CMOS technology; Digital integrated circuits; Displays; Electronics packaging; Laboratories; Photonic band gap; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-2739-0
  • Electronic_ISBN
    978-1-4244-2740-6
  • Type

    conf

  • DOI
    10.1109/ICEPT.2008.4607145
  • Filename
    4607145