DocumentCode
2688969
Title
Development of a Pulsed IMPATT Diode Amplifier
Author
Sigmon, B.E. ; Van Alstyne, T.W.
fYear
1986
fDate
2-4 June 1986
Firstpage
105
Lastpage
108
Abstract
The impedance transformation properties of parallel coupled lines have been used to develop broadband reflection amplifiers operating in X-band. These amplifiers have demonstrated peak powers of 40 watts (single IMPATT diode), 63 watts (two diode combiner), and 110 watts (four diode combiner). 3 dB bandwidths of 1.4 to 3 GHz (14 to 30%) have been attained.
Keywords
Bandwidth; Broadband amplifiers; Coupling circuits; Diodes; Impedance; Microstrip; Operational amplifiers; Packaging; Power amplifiers; Pulse amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1986.1132121
Filename
1132121
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