Title :
Development of a Pulsed IMPATT Diode Amplifier
Author :
Sigmon, B.E. ; Van Alstyne, T.W.
Abstract :
The impedance transformation properties of parallel coupled lines have been used to develop broadband reflection amplifiers operating in X-band. These amplifiers have demonstrated peak powers of 40 watts (single IMPATT diode), 63 watts (two diode combiner), and 110 watts (four diode combiner). 3 dB bandwidths of 1.4 to 3 GHz (14 to 30%) have been attained.
Keywords :
Bandwidth; Broadband amplifiers; Coupling circuits; Diodes; Impedance; Microstrip; Operational amplifiers; Packaging; Power amplifiers; Pulse amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132121
