Title :
Numerical simulation of the nonlinearity of the piezoresistive effect in the p-type silicon
Author :
Kolchuzhin, Vladimir A.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The results of numerical simulation of the piezoresistance effect in silicon are presented. The simulation is based on the complete expression for an energy spectrum (G.E. Pikus and G.L. Bir, 1972) using a formalism of relaxation time. The dependence of piezoresistance nonlinearity on crystallographic orientation is investigated
Keywords :
Boltzmann equation; Fermi level; carrier relaxation time; elemental semiconductors; perturbation theory; piezoresistance; silicon; valence bands; Boltzmann equation; Fermi level; Si; crystallographic orientation dependence; energy spectrum; numerical simulation; p-type silicon; perturbation theory; piezoresistive effect nonlinearity; piezoresistive sensors; relaxation time; stress-induced changes; uniaxial strain; valence bands; Capacitive sensors; Crystallography; Electromechanical sensors; Germanium; Mechanical sensors; Numerical simulation; Piezoresistance; Silicon; Stress; Transducers;
Conference_Titel :
Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0291-1
DOI :
10.1109/SREDM.2000.888577
