DocumentCode
2689015
Title
The series connection of IGBTs investigated by experiments and simulation
Author
Sigg, J. ; Bruckmann, M. ; Türkes, P.
Author_Institution
Corp. Res. & Dev., Siemens AG, Munich, Germany
Volume
2
fYear
1996
fDate
23-27 Jun 1996
Firstpage
1760
Abstract
Both, experimental and simulation techniques are used to investigate the series connection of IGBTs. An experimental setup with a power rating of 4.8 kV and 600 A is established. Circuit simulations are performed using physics-based models for the IGBT and the freewheeling diode. Experimental and calculated characteristics agree very well
Keywords
circuit analysis computing; insulated gate bipolar transistors; power convertors; power semiconductor diodes; semiconductor device models; 4.8 kV; 600 A; IGBT; circuit simulations; freewheeling diode; physics-based models; power converters; power rating; series connection; Circuit simulation; Driver circuits; Insulated gate bipolar transistors; Inverters; Open loop systems; Power semiconductor switches; Research and development; Semiconductor diodes; Standards development; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location
Baveno
ISSN
0275-9306
Print_ISBN
0-7803-3500-7
Type
conf
DOI
10.1109/PESC.1996.548819
Filename
548819
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