Title :
The series connection of IGBTs investigated by experiments and simulation
Author :
Sigg, J. ; Bruckmann, M. ; Türkes, P.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
Both, experimental and simulation techniques are used to investigate the series connection of IGBTs. An experimental setup with a power rating of 4.8 kV and 600 A is established. Circuit simulations are performed using physics-based models for the IGBT and the freewheeling diode. Experimental and calculated characteristics agree very well
Keywords :
circuit analysis computing; insulated gate bipolar transistors; power convertors; power semiconductor diodes; semiconductor device models; 4.8 kV; 600 A; IGBT; circuit simulations; freewheeling diode; physics-based models; power converters; power rating; series connection; Circuit simulation; Driver circuits; Insulated gate bipolar transistors; Inverters; Open loop systems; Power semiconductor switches; Research and development; Semiconductor diodes; Standards development; Voltage control;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548819
