Title :
GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology
Author :
Delaney, M.J. ; Chou, C.S. ; Larson, L.E. ; Jensen, J.F. ; Deakin, D.S. ; Brown, A.S. ; Hooper, W.W. ; Thompson, M.A. ; McCray, L.G. ; Rosenbaum, S.E.
Abstract :
High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm gate length have a transconductance gm of 600 mS/mm and an extrapolated cutoff frequency fT of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; gallium arsenide; integrated circuit technology; 0.2 micron; 22 GHz; 600 mS; 80 GHz; EHF; GaAs; III-V semiconductors; MESFET; SHF; cutoff frequency; digital integrated circuits; gate length; low temperature buffer technology; maximum clock rate; static SCFL frequency dividers; transconductance;
Conference_Titel :
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/CICC.1989.56782
