Title :
Design and characterization of the 600 V IGBT with monolithic over-voltage protection
Author :
Shen, Z. John ; Robb, Stephen P. ; Cheng, Clara
Author_Institution :
Power Products Div., Motorola Inc., Phoenix, AZ, USA
Abstract :
A 600 V IGBT with a monolithic overvoltage protection circuit has been developed to provide protection against overvoltage stress. The device operates under normal operating conditions just like a conventional IGBT but is able to sustain much higher avalanche energy under the abnormal operating condition of voltage overshoot. Nearly 400% increase in maximum avalanche energy has been achieved with the new design. The device is fabricated with a conventional IGBT process without adding any extra cost. The device structure, modeling, fabrication and characteristics are discussed in detail
Keywords :
insulated gate bipolar transistors; overvoltage protection; power bipolar transistors; semiconductor device models; semiconductor device testing; 600 V; avalanche energy; characterization; design; device structure; fabrication; monolithic overvoltage protection; overvoltage stress; power IGBT; voltage overshoot; Clamps; Costs; Diodes; Fabrication; Insulated gate bipolar transistors; MOSFET circuits; Protection; Stress; Threshold voltage; Voltage control;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548821
