Design and characterization of the 600 V IGBT with monolithic over-voltage protection

Author

Shen, Z. John ; Robb, Stephen P. ; Cheng, Clara

Author_Institution

Power Products Div., Motorola Inc., Phoenix, AZ, USA

Volume

2

fYear

1996

fDate

23-27 Jun 1996

Firstpage

1773

Abstract

A 600 V IGBT with a monolithic overvoltage protection circuit has been developed to provide protection against overvoltage stress. The device operates under normal operating conditions just like a conventional IGBT but is able to sustain much higher avalanche energy under the abnormal operating condition of voltage overshoot. Nearly 400% increase in maximum avalanche energy has been achieved with the new design. The device is fabricated with a conventional IGBT process without adding any extra cost. The device structure, modeling, fabrication and characteristics are discussed in detail

Keywords

insulated gate bipolar transistors; overvoltage protection; power bipolar transistors; semiconductor device models; semiconductor device testing; 600 V; avalanche energy; characterization; design; device structure; fabrication; monolithic overvoltage protection; overvoltage stress; power IGBT; voltage overshoot; Clamps; Costs; Diodes; Fabrication; Insulated gate bipolar transistors; MOSFET circuits; Protection; Stress; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE

Conference_Location

Baveno

ISSN

0275-9306

Print_ISBN

0-7803-3500-7

Type

conf

DOI

10.1109/PESC.1996.548821

Filename

548821