Title :
Degradation of time-dependent dielectric breakdown characteristics of MOS capacitors by silicon surface roughness
Author :
Nakanishi, T. ; Kishii, S. ; Ohsawa, A. ; Honda, K.
Author_Institution :
Fijitsu Lab. Ltd., Kawasaki, Japan
Abstract :
The roughness of the Si-SiO2 interface was observed using reflection electron microscopy, and the influence of roughness on MOS device reliability was investigated. It was found that the original surface roughness of the Si wafer degrades the time-dependent dielectric breakdown (TDDB) characteristics of MOS capacitors. Large surface roughness causes Si-SiO2 interface roughness, which enhances the tunneling current through the oxide. Large tunneling current leads to poor TDDB characteristics
Keywords :
capacitors; electric breakdown of solids; electron microscope examination of materials; elemental semiconductors; metal-insulator-semiconductor devices; reliability; semiconductor-insulator boundaries; silicon; silicon compounds; surface topography; tunnelling; MOS capacitors; MOS device reliability; Si wafer roughness; Si-SiO2 interface roughness; breakdown characteristics degradation; reflection electron microscopy; surface roughness; time-dependent dielectric breakdown; tunnelling current enhancement; Current measurement; Degradation; Density measurement; Dielectric breakdown; Electrons; MOS capacitors; Rough surfaces; Silicon; Surface roughness; Tunneling;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68587
