DocumentCode :
2689406
Title :
Parametric study of thin-film zero-group velocity resonators (ZGVR)
Author :
Yantchev, Ventsislav ; Arapan, L. ; Ivanov, Ivan ; Uzunov, I. ; Katardjiev, I. ; Plessky, V.
Author_Institution :
Angstrom Lab., Uppsala Univ., Uppsala, Sweden
fYear :
2012
fDate :
7-10 Oct. 2012
Firstpage :
307
Lastpage :
310
Abstract :
Here we demonstrate experimentally a novel, small form factor, resonant architecture employing the intrinsic zero-group-velocity dispersion of the first order symmetric Lamb wave S1 propagating in piezoelectric AlN film membranes. Designs with different topologies were fabricated and compared. FEM analysis is used to verify the observed differences while providing a deeper insight to the resonator performance. Technique for improvement of the device performance are further proposed.
Keywords :
III-V semiconductors; aluminium compounds; crystal resonators; finite element analysis; surface acoustic waves; wide band gap semiconductors; AlN; FEM analysis; device performance; first order symmetric Lamb wave; form factor; intrinsic zero-group-velocity dispersion; piezoelectric film membranes; resonant architecture; resonator performance; thin-film zero-group velocity resonators; Acoustics; Couplings; Electrodes; III-V semiconductor materials; Resonant frequency; Topology; Transducers; AlN; Lamb Wave; Resonator; Thin Film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location :
Dresden
ISSN :
1948-5719
Print_ISBN :
978-1-4673-4561-3
Type :
conf
DOI :
10.1109/ULTSYM.2012.0075
Filename :
6562107
Link To Document :
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