Parametric study of thin-film zero-group velocity resonators (ZGVR)

Author

Yantchev, Ventsislav ; Arapan, L. ; Ivanov, Ivan ; Uzunov, I. ; Katardjiev, I. ; Plessky, V.

Author_Institution

Angstrom Lab., Uppsala Univ., Uppsala, Sweden

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

307

Lastpage

310

Abstract

Here we demonstrate experimentally a novel, small form factor, resonant architecture employing the intrinsic zero-group-velocity dispersion of the first order symmetric Lamb wave S1 propagating in piezoelectric AlN film membranes. Designs with different topologies were fabricated and compared. FEM analysis is used to verify the observed differences while providing a deeper insight to the resonator performance. Technique for improvement of the device performance are further proposed.

Keywords

III-V semiconductors; aluminium compounds; crystal resonators; finite element analysis; surface acoustic waves; wide band gap semiconductors; AlN; FEM analysis; device performance; first order symmetric Lamb wave; form factor; intrinsic zero-group-velocity dispersion; piezoelectric film membranes; resonant architecture; resonator performance; thin-film zero-group velocity resonators; Acoustics; Couplings; Electrodes; III-V semiconductor materials; Resonant frequency; Topology; Transducers; AlN; Lamb Wave; Resonator; Thin Film;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2012 IEEE International

Conference_Location

Dresden

ISSN

1948-5719

Print_ISBN

978-1-4673-4561-3

Type

conf

DOI

10.1109/ULTSYM.2012.0075

Filename

6562107